The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 47 (1-4) , 95-98
- https://doi.org/10.1080/00337578008209194
Abstract
(1980). The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates. Radiation Effects: Vol. 47, No. 1-4, pp. 95-98.Keywords
This publication has 2 references indexed in Scilit:
- Depth distribution of knock-on nitrogen in Si by phosphorus implantation through Si3N4 filmsApplied Physics Letters, 1977
- MOS measurement of oxygen recoils from As implantation into silicon dioxideApplied Physics Letters, 1976