Some general recombination statistics for semiconductor surfaces
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (8) , 1284-1286
- https://doi.org/10.1109/t-ed.1982.20868
Abstract
Trapping recombination by the usual phonon emission processes and by Auger processes can be combined to yield generalized Shockley-Read-Hall statistics. This has been generalized further to include a spectrum of trapping states, as well as the effect of "extra carriers." These are carriers which do not come directly from, or go to, the main bands of the semiconductor considered. The result should be useful in devices, for example, in studies of surface recombination.Keywords
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