Root-law circuit using monolithic bipolar-transistor arrays
- 17 October 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (21) , 439-440
- https://doi.org/10.1049/el:19740349
Abstract
Close matching in the respective parameters of bipolar transistors fabricated on the same monolithic chip facilitates the design of a circuit characterised bywhere I0 is the output current, I1, ‥, Im are input currents and n (≥1) is an integral number. Experimental measurements for n=2, m=3 and 1 μA ≤ Ir ≤ 1 mA are presented and discussed in relation to a simple theoretical error formula.Keywords
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