An experimentally verified IGBT model implemented in the Saber circuit simulator
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Power Electronics, 1990
- Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Industry Applications, 1990
- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988