Ion implanted GaAs power FETs

• 1 January 1978
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 368-372
• https://doi.org/10.1109/iedm.1978.189430

Abstract

Keywords

• GALLIUM ARSENIDE
• FETS
• VOLTAGE
• FABRICATION
• IMPLANTS
• LINEARITY
• ION IMPLANTATION
• CAPACITANCE
• OHMIC CONTACTS
• MATERIAL PROPERTIES