Minority-carrier accumulation at the base edge of a junction space-charge region under short-circuit conditions

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31 July 1987

journal article
Published by Elsevier in Solid-State Electronics

Vol. 30 (7) , 755-758
https://doi.org/10.1016/0038-1101(87)90115-8

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to experimental short-circuit-current decay
IEEE Transactions on Electron Devices, 1984