New oxygen related shallow thermal donor centres in Czochralski-grown silicon

This publication has 13 references indexed in Scilit:

• High-resolution studies of sulfur- and selenium-related donor centers in silicon
  Physical Review B, 1984
• Photoconductive response of compensating impurities in photothermal ionization spectroscopy of high-purity silicon and germanium
  Applied Physics Letters, 1983
• Photoelectric spectroscopy of indium in silicon
  Physical Review B, 1982
• DLTS and PTIS of new donors in oxygen-doped germanium
  Solid State Communications, 1982
• Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors
  Reports on Progress in Physics, 1981
• Photoelectric Spectroscopy – A New Method of Analysis of Impurities in Semiconductors
  Physica Status Solidi (a), 1977
• Double-beam fourier spectroscopy with two inputs and two outputs
  Optics Communications, 1976
• Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge
  Solid State Communications, 1974
• Photothermal ionization via excited states of sulfur donor in silicon
  Solid State Communications, 1971
• Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and Germanium
  Physical Review B, 1969