Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures
- 28 August 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (9) , 1286-1288
- https://doi.org/10.1063/1.114399
Abstract
Using x‐ray diffraction and transmission electron microscopy we have found that InAs1−xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain‐dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate.Keywords
This publication has 0 references indexed in Scilit: