Diffusion of tin implanted in aluminium
- 1 June 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 63 (6) , 1167-1174
- https://doi.org/10.1080/01418619108205575
Abstract
The temperature and pressure dependence of diffusion of Sn113 implanted in high-purity aluminium single crystals has been investigated by means of the serial-sectioning technique. It was found that tin is a fast diffusing solute in A1. The temperature dependence of the process in the temperature range 649–906 K can be described by The activation volume of diffusion was found to be 0·87 ± 0·01 in atomic volume units at 787·5 K.Keywords
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