New photoluminescence defect spectra in silicon irradiated at 100 K: Observation of interstitial carbon?
- 31 January 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (4) , 241-244
- https://doi.org/10.1016/0038-1098(87)91010-6
Abstract
No abstract availableKeywords
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- Theory of Donor States in SiliconPhysical Review B, 1955