Double Injection in Deep-Lying Impurity Semiconductors

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Abstract
The analysis of double injection for a semi‐insulator model with a single recombination center extends previous treatments by varying the ratio of occupied and unoccupied centers. The voltage‐current characteristic of the model consists of an Ohm's‐law region followed by a square‐law region that terminates into a vertically rising current (threshold of double injection). Expressions for the Ohm's‐law‐square‐law intersection voltage and the threshold (breakdown) voltages represent experimental results better than expressions derived from earlier models. Together with experimental voltages from Au‐doped Ge devices at low temperature, these expressions give the electron‐ and hole‐capture‐cross section of the recombination center.