Distribution of intermediate oxidation states at the silicon/silicon dioxide interface obtained by low-energy ion implantation

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Abstract
This work has been undertaken to understand the morphology of Si/SiO2 interfaces obtained by low-energy ion implantation. The crystallinity of the interface is determined by the observation of tetrahedral configurations [Si–(Si4−x–Ox) with x=0, 1,...,4] of silicon atoms bound to oxygen and/or silicon. The distribution over the whole interface also has been considered and the amorphous dioxide has been characterized by its interfacial depth and compared with the theoretical models such as the random bonding model or the random mixture model.

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