Origin of photoluminescence from Er3+ centers in erbium doped GaAs and Al0.4Ga0.6 As grown by MBE
- 1 September 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (9) , 1137-1140
- https://doi.org/10.1007/bf02817685
Abstract
No abstract availableKeywords
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