Abstract
Spin-coated and vacuum sublimed amorphous thin films (∼100 nm thick) were converted into single crystalline films with a simple moving-zone-annealing technique, in which a heated metal wire generated a narrow annealed zone in the film as it is moved across the sample. This annealing resulted in both the photoluminescence and electroluminescence to increase dramatically (by 3–4 times), for example with Ru(bpy)3(ClO4)2 and aluminum 8-hydroxyquinoline, (Alq3), as light emitting devices. This technique is of interest in improving the behavior of highly luminescent thin film optoelectronic devices.

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