Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films

1 December 1989

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 28 (12A) , L2153-2154
https://doi.org/10.1143/jjap.28.l2153

Abstract

Metal-semiconductor field-effect transistors (MESFET's) have been fabricated on a boron-doped diamond epitaxial film. This is the first report of a planar type transistor using a diamond film.

Keywords

FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR
DIAMOND

This publication has 4 references indexed in Scilit:

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IEEE Electron Device Letters, 1987
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