Monte Carlo simulation of bipolar transistors

1 December 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (12) , 1724-1730
https://doi.org/10.1109/t-ed.1984.21778

Abstract

A new approach is proposed to investigate, the limits of validity of the conventional drift-diffusion equation analysis for modeling bipolar transistor structures containing submicrometer dimensions. The single-particle Monte Carlo method is used for the solution of the Boltzmann equation. An electron velocity overshoot of 1.8 times the static saturation velocity has been found for electrons near the base-collector junction of a silicon device. The effect of this velocity overshoot was calculated to enhance the output collector current and reduce the electron transit time by 5 percent for the device structure considered in this work.

Keywords

This publication has 14 references indexed in Scilit:

Numerical simulation of hot-carrier transport in silicon bipolar transistors
IEEE Transactions on Electron Devices, 1983
Current equations for velocity overshoot
IEEE Electron Device Letters, 1982
On the Monte Carlo simulation of bipolar device
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
Solid-State Electronics, 1977
A review of some charge transport properties of silicon
Solid-State Electronics, 1977
Current transport in narrow-base transistors
Solid-State Electronics, 1977
Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors
Electronics Letters, 1976
Two-dimensional carrier flow in a transistor structure under nonisothermal conditions
IEEE Transactions on Electron Devices, 1976
Two-dimensional particle models in semiconductor-device analysis
Electronics Letters, 1974
Electron dynamics in short channel field-effect transistors
IEEE Transactions on Electron Devices, 1972