Failure modes in silicon avalanche transit-time microwave devices
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (9) , 619-620
- https://doi.org/10.1109/T-ED.1967.16019
Abstract
A type of avalanche diode has been subjected to accelerated life test and to failure analysis. The primary failure mechanism is believed to be a form of second breakdown; no significant progressive degradation was observed.Keywords
This publication has 0 references indexed in Scilit: