CAD for silicon anisotropic etching

4 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 111-112
https://doi.org/10.1109/memsys.1990.110259

Abstract

A computer program that simulates silicon single crystal etching in KOH is proposed. Starting from a two-dimensional mask the program finds the relevant etching planes and delivers a projected three-dimensional output of the etched structure with the etchtime (etchdepth) as parameter. The program is discussed and sample results are shown.

Keywords

SILICON
ANISOTROPIC MAGNETORESISTANCE
ETCHING
SHAPE
COMPUTATIONAL MODELING
PREDICTIVE MODELS
COMPUTER SIMULATION
MICROMACHINING
DESIGN ENGINEERING
CRYSTALS

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