Electronic structure of high pressure phase of AlN
- 1 August 1993
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 8 (8) , 1922-1927
- https://doi.org/10.1557/jmr.1993.1922
Abstract
Results of ab initio Hartree–Fock calculations for the electronic structure of aluminum nitride in the (high-pressure) rocksalt phase are reported. In the rocksalt phase, the calculated lattice constant is 3.982 Å with the bulk modulus of 329 GPa. The band structure is predicted to be indirect at the X point with a gap of 8.9 eV. In this phase, the bonding is shown to be essentially ionic between Al and N. The direct gap shows a stronger linear dependence on pressure with a pressure derivative of 68 meV/GPa compared to that of the indirect gap with a pressure derivative of 31.7 meV/GPa.Keywords
This publication has 11 references indexed in Scilit:
- High-pressure properties of wurtzite- and rocksalt-type aluminum nitridePhysical Review B, 1991
- High pressure phase transition in aluminium nitrideSolid State Communications, 1991
- Electronic structure and bonding at SiC/AlN and SiC/BP interfacesPhysical Review B, 1991
- Correlated hartree-fock electronic structure of ZnO and ZnSJournal of Physics and Chemistry of Solids, 1991
- Ab initio Hartree-Fock calculations for periodic compounds: application to semiconductorsJournal of Physics: Condensed Matter, 1990
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering: B, 1988
- Hartree-Fock Ab Initio Treatment of Crystalline SystemsPublished by Springer Nature ,1988
- Electronic structure of AlNPhysical Review B, 1986
- The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processApplied Physics Letters, 1978
- Correlation effects in energy-band theoryPhysical Review B, 1974