Time resolved luminescence of photoexcited p-type gallium arsenide by population mixing
- 15 December 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (12) , 935-937
- https://doi.org/10.1063/1.92617
Abstract
A novel technique in time resolved luminescence spectroscopy called population mixing using a subpicosecond cw mode‐locked dye laser has been developed and applied to p‐type GaAs at low temperatures. Using this technique the relaxation lifetime for electron recombination was measured to be 39±7 ps for p‐type GaAs with Zn at 6×1018 cm−3 hole concentration. This is comparable to the relaxation time measured by a streak camera.Keywords
This publication has 12 references indexed in Scilit:
- Hot-Carrier Thermalization in Amorphous SiliconPhysical Review Letters, 1981
- Picosecond Relaxation of Optically Induced Absorption in Amorphous SemiconductorsPhysical Review Letters, 1979
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979
- Picosecond spectroscopy of semiconductorsSolid-State Electronics, 1978
- Low density photoexcitation phenomena in semiconductors: Aspects of theory and experimentSolid-State Electronics, 1978
- An optical up-conversion light gate with picosecond resolutionOptics Communications, 1975
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Ultrafast Phenomena in Liquids and SolidsScientific American, 1973
- New luminescence line associated with the inelastic collision of excitonic molecules in CdS and CdSeSolid State Communications, 1973
- Anisotropic excitonic molecules in CdS and CdSeSolid State Communications, 1973