Optical dephasing in disordered semiconductors

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Abstract
We demonstrate that optical dephasing in disordered semiconductors does not require quasiparticle interaction but can be solely caused by disorder. We show that localization effects strongly influence the optical-dephasing signal by calculating the nonlinear polarization, taking into account disorder nonperturbatively. Decay times of the order of fs to ps can be expected depending on the ratio of diagonal disorder and intersite coupling. It follows that dephasing experiments performed on disordered semiconductors cannot be analyzed simply in terms of quasiparticle interactions.