Ion implantation in Si/Si1−xGex epitaxial layers and superlattices
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 405-408
- https://doi.org/10.1016/0168-583x(89)90814-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Thermal relaxation of metastable strained-layer/Si epitaxyPhysical Review B, 1985
- Structure of epitaxial crystal interfacesSurface Science, 1972