Slip and twinning in high-stress-deformed GaAs and the influence of doping

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Abstract
The mechanisms of plastic deformation of GaAs at room temperature have been studied using optical microscopy and transmission electron microscopy. This work was performed on crystals deformed by high-stress compression under a confining pressure. Two competitive deformation mechanisms were found: perfect dislocation glide and microtwinning. Twinning is all the more important as the yield stress is high and this stress clearly depends on doping. The microtwins are produced by the gliding of B§ partial dislocations. The mobilities of these partials were also studied; 90° partials are always more mobile than 30° partials. This difference is analysed in terms of nucleation and migration of double kinks on these partial dislocations.