Electrical properties of chromium silicide films: Cr3Si and Cr5Si3

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Abstract
Cr3Si and Cr5Si3 compounds were obtained by solid state reaction at 800 degrees C in thin bilayers of amorphous silicon and chromium evaporated on SiO2 substrates. Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to obtain information about chemical and crystallographic characteristics of the samples. Electrical resistivity and Hall voltage measurements on van der Pauw structures were carried out as a function of the temperature in the ranges 10-1100 K and 10-300 K, respectively. The authors found some analogies with the case of a classical metal, but remarkable differences were observed in the resistivity against temperatures behaviour and in the order of magnitude of the resistivity and of the Hall coefficient.