Interaction of hydrogen with the vacancy-oxygen pair produced in n-type silicon by electron irradiation

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Abstract
Interaction of hydrogen with the vacancy-oxygen pair produced in n-type silicon by 10 MeV electron irradiation was studied by means of depth profile measurements by deep-level transient spectroscopy. Hydrogen was incorporated into electron-irradiated n-type silicon by wet chemical etching. The reaction of the vacancy-oxygen pair with hydrogen leads to the formation of a defect labelled NH1 (Ec -0.31 eV). The depth profiles of the vacancy-oxygen pair and NH1 defect indicate that further reaction of the NH1 defect with hydrogen occurs, especially in the hydrogen-rich region, making the NH1 defect inactive as an electron trap. It was found that the passivation of the vacancy-oxygen pair as an electron trap by hydrogen is caused via the above two steps, transformation into the NH1 defect and association of the NH1 defect with hydrogen.