Characterization of Nd:Y3Al5O12 thin films grown on various substrates by pulsed laser deposition
- 11 November 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (20) , 2977-2979
- https://doi.org/10.1063/1.117749
Abstract
Epitaxial Nd‐doped yttrium aluminum garnet (NdxY3−xAl5O12 or Nd:YAG) films have been grown on various substrates by pulsed laser deposition for the purpose of fabricating diode‐pumped waveguide lasers. The films were characterized by Rutherford backscattering, x‐ray diffraction, atomic force microscopy, and photoluminescence measurements. Nd:YAG films on (100) silicon substrate with a large lattice mismatch show oriented stoichiometric growth. On the other hand, Nd:YAG films on garnet substrates (Nd undoped Gd3Ga5O12,Y3Al5O12 and Zr‐, Sc‐doped Gd3Ga5O12) show epitaxial growth with smooth surfaces. The optical properties of Nd‐doped YAG thin films on various substrates were comparable to those of Nd:YAG bulk laser crystal.Keywords
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