Limitations of selective epitaxial growth conditions in gas-source MBE using Si2H6
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 860-863
- https://doi.org/10.1016/0022-0248(91)91097-t
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2Journal of Applied Physics, 1989
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Gas source silicon molecular beam epitaxy using silaneApplied Physics Letters, 1987
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982