Optimisation of spacer layer thickness in n -Al x Ga 1− x As/ p + -GaAs heterojunction diodes grown by molecular beam epitaxy
- 5 June 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (12) , 627-629
- https://doi.org/10.1049/el:19860430
Abstract
The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1−xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.Keywords
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