Preparation and Photovoltaic Properties of CdIn2S4/CuInSe2 Heterojunctions

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Abstract
N-CdIn2S4/p-CuInSe2 heterojunctions have been prepared by depositing CdIn2S4 films on p-type CuInSe2 single crystals. The current-voltage characteristics suggest that the tunnel-recombination process predominates in the mechanisms of passage of forward current through the heterojunctions. The capacitance-voltage characteristics of the diodes were those of an abrupt junction. An energy-band diagram for the heterojunctions is proposed. The photovoltaic properties obtained are an open-circuit voltage of 0.43 V, short-circuit current of 8.7 mA/cm2, fill factor of 0.46 and conversion efficiency of 2%. The photospectral response of the diodes, measured for light incident through the CdIn2S4 window, is fairly flat between 500 and 1200 nm. The quantum efficiency at 633 nm is 0.18.

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