TMAH/IPA anisotropic etching characteristics
- 1 June 1993
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 37-38, 737-743
- https://doi.org/10.1016/0924-4247(93)80125-z
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Mesa structure formation using potassium hydroxide and ethylene diamine based etchantsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- TMAHW etchants for silicon micromachiningPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Fabrication of Non‐Underetched Convex Corners in Anisotropic Etching of (100)‐Silicon in Aqueous KOH with Respect to Novel Micromechanic ElementsJournal of the Electrochemical Society, 1990
- Anisotropic etching of silicon in hydrazineSensors and Actuators, 1988
- Some New Three Level Designs for the Study of Quantitative VariablesTechnometrics, 1960