Electron beam damage of advanced silicon bipolar transistors and circuits
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34, 30-33
- https://doi.org/10.1109/iedm.1988.32742
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- An advanced high-performance trench-isolated self-aligned bipolar technologyIEEE Transactions on Electron Devices, 1987
- Measurements of deep penetration of low-energy electrons into metal-oxide-semiconductor structureJournal of Applied Physics, 1981