Production of silicon oxides from glow discharge decomposition of silane and nitric oxide

6 November 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (23) , 1243-1244
https://doi.org/10.1049/el:19860852

Abstract

Films of silicon oxide have been produced by PECVD from NO + SiH₄ mixtures. The results indicate that the film properties are less dependent on deposition conditions than when the more usual N₂O + SiH₄ mixtures are used. The films produced have a high resistivity and good interfacial properties with silicon, but are fairly porous with a relatively high etch rate in p-etch.

Keywords

GLOW DISCHARGE DECOMPOSITION
CVD
DIELECTRIC THIN FILMS
ELECTRICAL PROPERTIES
POROUS
P-ETCH
PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION
NO-SIH4
INTERFACIAL PROPERTIES
HIGH RESISTIVITY
HIGH ETCH RATE
SIO2

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