Operation of α(6H)-SiC pressure sensor at 500°C
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1407-1409
- https://doi.org/10.1109/sensor.1997.635501
Abstract
6H-SiC piezoresistive pressure sensors operational at 500/spl deg/C, were batch fabricated and tested. The full scale output (FSO at 1000 psi) was 40.66 mV and 20.03 mV at 23/spl deg/C and 500/spl deg/C, respectively, The full-scale linearity of -0.17% and hysteresis of 0.17% compared favorably with current technology. No serious degradation was observed when operated for ten hours at 500/spl deg/C, The temperature coefficient of resistance (TCR), was -0.25%//spl deg/C and -0.05%//spl deg/C at 100/spl deg/C and 500/spl deg/C, respectively, The temperature coefficient of gauge factor (TCGF) exhibited negative values of 0.19%//spl deg/C and -0.11%/spl deg/C at 100/spl deg/C and 500/spl deg/C, respectively, This work demonstrated batch manufacturing and operation of pressure sensors for temperatures beyond silicon technology.Keywords
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