High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrateApplied Physics Letters, 1986
- Optical properties of CdTe/(Cd, Mn)Te multiple quantum wellsIEEE Journal of Quantum Electronics, 1986
- II-VI infrared superlatticesJournal of Applied Physics, 1985
- Giant exciton Faraday rotation in Cd1−xMnxTe mixed crystalsSolid State Communications, 1978