Rise time and recovery of GaAs photoconductive semiconductor switches

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Abstract
Fast rise time applications have encouraged us to look at the rise time dependences of lockon switching. Our tests have shown rise time and delay effects which decrease dramatically with increasing electric field across the switch and/or optical energy used in activating lockon. Interest in high repetition rate photoconductive semiconductor switches (PCSS) which require very little trigger energy (our 1 . 5cm long switches have been triggered with as little as 20 J) has also led us to investigate recovery from lock-on. Several circuits have been used to induce fast recovery the fastest being 30 ns. The most reliable circuit produced a 4-pulse burst of +/- 10-kY pulses at 7 MHz with lOO-jtJ trigger energy per pulse.

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