Far infrared and submillimeter impact ionization modulator
- 1 May 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (5) , 806-807
- https://doi.org/10.1109/PROC.1969.7084
Abstract
Free carriers in germanium produced by impact ionization at 4.2°K have been used to modulate 200-µ- to 2-mm-wavelength radiation. Modulation depths up to 100 percent and bandwidths of 100 MHz have been obtained.Keywords
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