Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
- 20 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (16) , 3407-3409
- https://doi.org/10.1063/1.1621078
Abstract
We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2− defect. A second spectrum is likely due to an Hf+3 related defect.Keywords
This publication has 23 references indexed in Scilit:
- Charge trapping in high k gate dielectric stacksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2OApplied Physics Letters, 2003
- Atomic layer deposition of thin hafnium oxide films using a carbon free precursorJournal of Applied Physics, 2003
- Charge trapping in ultrathin hafnium oxideIEEE Electron Device Letters, 2002
- The radiation response of the high dielectric-constant hafnium oxide/silicon systemIEEE Transactions on Nuclear Science, 2002
- Dielectric property and thermal stability of HfO2 on siliconApplied Physics Letters, 2002
- Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2Applied Physics Letters, 2002
- What can electron paramagnetic resonance tell us about the Si/SiO2 system?Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devicesJournal of Applied Physics, 1986
- ESR studies of 0−2 adsorbed on Ti supported surfaces: Analysis of motional dynamicsThe Journal of Chemical Physics, 1981