Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion

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Abstract
A physical model based on the statistics of silicon point defects was described in the preceding companion paper to explain the faster oxidation rates of heavily doped silicon. The mechanism by which dopant levels affect the interface oxidation rate was postulated to be an increase in reaction sites or silicon vacancies caused by the shifting of the Fermi level. The predictions of this model for n+ and p+ silicon oxidation kinetics are tested in this paper under a wide variety of oxidation conditions. The physical meaning of the model and its implications for other process phenomena are pursued.

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