Influence of solvent and impurities on habit and morphology of semiconductor crystals
- 1 January 1968
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 3-4, 321-326
- https://doi.org/10.1016/0022-0248(68)90165-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanismJournal of Physics and Chemistry of Solids, 1964
- Structure, growth and morphology of crystals*Zeitschrift für Kristallographie, 1963
- Growth facets on III–V intermetallic compoundsJournal of Physics and Chemistry of Solids, 1962
- Preparation of Silicon RibbonsJournal of Applied Physics, 1961