Low-field electrical breakdown in n-indium phosphide
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 9 (1) , 93-94
- https://doi.org/10.1016/0022-3697(59)90094-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Minority Carrier Extraction in GermaniumPhysical Review B, 1955
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955