Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation
- 1 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (18) , 2836-2838
- https://doi.org/10.1063/1.125166
Abstract
We report electrical characteristics of Ta2O5 films deposited by a simple electron beam gun evaporator. We describe thickness-dependent characteristics for films with thicknesses of 7–130 nm. An equivalent SiO2 thickness of 3.5–4.5 nm for films whose leakage current density at an electric field of 106 V/cm is lower than 10−7 A/cm2 is demonstrated.Keywords
This publication has 13 references indexed in Scilit:
- Insulating properties of tantalum pentoxide capacitor films obtained by annealing in dry ozoneJournal of Applied Physics, 1999
- Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectricsIEEE Electron Device Letters, 1998
- Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor systemJournal of Applied Physics, 1998
- Charge trapping and degradation in high-permittivity TiO2 dielectric filmsIEEE Electron Device Letters, 1997
- Leakage currents in amorphous Ta2O5 thin filmsJournal of Applied Physics, 1997
- Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substratesApplied Physics Letters, 1996
- Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambientsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memoriesIEEE Transactions on Electron Devices, 1989
- Photo-Process of Tantalum Oxide Films and Their CharacteristicsJapanese Journal of Applied Physics, 1988