Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic
- 1 May 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (9) , 4393-4395
- https://doi.org/10.1063/1.344914
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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