AN ANALYTIC APPROACH TO THE ELECTRON DRIFT VELOCITY IN GALLIUM ARSENIDE FOR DIFFERENT TEMPERATURES

15 July 1969

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 15 (2) , 64-66
https://doi.org/10.1063/1.1652904

Abstract

The intervalley scattering of electrons in gallium arsenide at high electric fields has been considered by approximating the energy distribution of the electrons by a Davydov distribution. From this distribution the velocity‐field curve for the electrons has been determined and compared to experiments. Using the results, the temperature dependence of the threshold field and the efficiency of LSA‐diodes has been calculated.

Keywords

This publication has 4 references indexed in Scilit:

Monte Carlo calculation of the velocity-field relationship for gallium arsenide
Solid State Communications, 1968
High-Field Transport in $n$ - Type GaAs
Physical Review B, 1968
The Gunn effect
Reports on Progress in Physics, 1967
High-field distribution function in GaAs
IEEE Transactions on Electron Devices, 1966