Site exchange mechanism in surfactant-mediated epitaxial growth
- 18 July 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 73 (3) , 460-463
- https://doi.org/10.1103/physrevlett.73.460
Abstract
The energetics of site exchange in surfactant-mediated epitaxial growth is investigated using first-principles calculations for the homoepitaxy of Si/Si(001) with an As monolayer. We find that the interaction between Si dimers on the As-terminated Si(001) surface repels the Si dimers from each other and initiates site exchange between the top-layer Si atoms and the second-layer As atoms. The origin of the site exchange is the second-layer rebonding in the resulting geometries. These chemical effects of the As surfactant prevent Si islanding; this is also valid for Ge/Si heteroepitaxy.Keywords
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