On the amplification mechanism of the ion-channel laser
- 1 October 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Plasma Science
- Vol. 18 (5) , 837-841
- https://doi.org/10.1109/27.62351
Abstract
The amplification mechanism of the ion-channel laser (ICL) in the low-gain regime is studied. In this concept, a relativistic electron beam is injected into a plasma whose density is comparable to or lower than the beam's density. The head of the electron beam pushes out the plasma electrons, leaving an ion channel. The ion-focusing force causes the electrons to oscillate (betatron oscillations) about the axis and plays a role similar to the magnetic field in a cyclotron autoresonance maser (CARM). Radiation can be produced with wave frequencies from microwaves to X-rays depending on the beam energy and plasma density: omega approximately 2 gamma /sup 3/2/ omega /sub pe/, where gamma is the Lorentz factor of the beam and omega /sub pe/ is the plasma frequency. Transverse (relativistic) bunching and axial (conventional) bunching are the amplification mechanisms in ICLs; only the latter effect operates in free-electron lasers. The competition of these two bunching mechanisms depends on beam velocity nu /sub 0z/; their dependences on nu /sub 0z/ cancel for the cyclotron autoresonance masers. A linear theory is developed to study the physical mechanisms, and a PIC (particle-in-cell) simulation code is used to verify the theory. The mechanism is examined as a possible explanation for experimentally observed millimeter radiation from relativistic electron beams interacting with plasmas.<>Keywords
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