Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12A) , L1725
- https://doi.org/10.1143/jjap.32.l1725
Abstract
Active-nitrogen-doped p-type ZnSe epitaxial layers were grown by gas-source molecular beam epitaxy using H2Se. Electrical properties of the N-doped ZnSe layers changed drastically depending on the growth temperature and the VI/II ratio. With decreasing growth temperature, the net acceptor concentration increased. At the growth temperature of 300°C, the net acceptor concentration was as high as 1.02×1018 cm-3. Using this technique, p-n junction diodes with an active layer of ZnCdSe/ZnSe multiple quantum wells were fabricated. These diodes emitted clearly visible blue light (477 nm) at room temperature.Keywords
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