Dielectric Properties of Reactively Evaporated Silicon Monoxide

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Abstract
Dielectric constant and dissipation factor for films formed by the reactive evaporation of silicon monoxide in oxygen have been measured as a function of deposition rate, oxygen pressure, electrode material, substrate temperature during evaporation, and source temperature. The dielectric properties are shown to depend primarily on the ratio of molecular impingement rates at the substrate of O2 and SiO (p/r), independent of substrate temperature and electrode material. Dissipation factor, but not dielectric constant, is strongly dependent on source temperature. Some dc conductivity and capacitor discharge characteristics are related to the p/r parameter.

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