Zinc-doping of (511)A layers of (Al 0.6 Ga 0.4 ) 0.5 In 0.5 P grown by atmospheric metalorganic vapour phase epitaxy
- 16 March 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (6) , 413-414
- https://doi.org/10.1049/el:19890284
Abstract
Zinc-doping into (511)A (AI0.6Ga0.4)0.5In0.5P layers using atmospheric metalorganic vapour phase epitaxy is investigated and compared to that into (100) layers. The doping efficiency is an order of magnitude higher for (511)A layers. Saturation in hole concentration begins at around 15×1018cm−3 in (511)A crystals, but at 4×1017cm−3 in (100) crystals.Keywords
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