Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
- 17 January 2001
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 353-356, 381-384
- https://doi.org/10.4028/www.scientific.net/msf.353-356.381
Abstract
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