Effect of H2 on the Quality of Si-Doped AlxGa1-xAs Grown by MBE
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A) , L121
- https://doi.org/10.1143/jjap.22.l121
Abstract
Dry H2 gas (5×10-8∼2.4×10-6 Torr) was introduced during MBE growth of Al x Ga1-x As (x∼0.2) at a substrate temperature of 680°C. Photoluminescence intensity was dramatically improved by a factor of 7 with the introduction of a small amount of H2 gas of 5×10-8∼5×10-7 Torr. The DLTS signal (0.6 eV below conduction band edge) decreased with the introduction of H2.Keywords
This publication has 3 references indexed in Scilit:
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- Effect of growth temperature on the photoluminescent spectra from Sn-doped Ga1−xAlxAs grown by molecular beam epitaxyApplied Physics Letters, 1981
- Effect of H2 on residual impurities in GaAs MBE layersApplied Physics Letters, 1978